Semiconductor
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Chan...
Semiconductor
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. All of these po wer MOSFETs are designed f or applications such as s witching
regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421.
November 1997
Features
25A and 28A, 80V and 100V rDS(ON) = 0.077Ω and 0.100Ω Single Pulse Avalanche Energy Rated Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB TO-262AA TO-263AB BRAND IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM
Symbol
D
G
S
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
JEDEC TO-262AA
SOURCE DRAIN GATE
DRAIN (FLANGE)...