GFP50N06

Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃) Absolute maximum ratings Characteristics T=25℃ unless otherwise noted Symbol BV DSS ID V GS E AS PD T STG Rθ JC V SD Value 60 50 ±20 470 130 -55 –175 1.15 1.4 Units V A V mJ W ℃ ℃/W V Drain-SourceVoltage Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipation Operating and Storage Temperature Range Thermal Resistance ,Junction-to Case Drain-source Diode Forward Voltage 1 of 2 http://www.Datasheet4U.com Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 Typ. 18 880 430 110 60 185 75 60 39 9.5 1.3 Parameter Gate threshold voltage Gate-Body leakage Current Zero Gate voltage Drain current Static drain-source on-resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Total Gate charge Gate-source charge Gate-drain charge Symbol V GS (th) I GSS I DSS R DS (on) C iss C oss C rss td (on) tr td (off) tf Qg Q gs Q gd Min 2.0 - Max 4.0 ±100 10 23 1140 560 140 130 380 160 130 45 - Units V nA µA mΩ pF Test conditions V DS =V GS I D =250µA V GS =±20V, V DS =0V V DS =60V, V GS =0V V GS =10V , I D =25A V GS =0V,V DS =25V, F=1.0MHZ V DD =30V,I D =25A, R G =50Ω ns nC V DS =48V,V GS =10V, I D =50A, 2 of 2 ...