IRFB3607GPBF

PD - 96329 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFB3607GPbF HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free S VDSS RDS(on) typ. max. ID D 75V 7.34m 9.0m 80A : : G D S TO-220AB IRFB3607GPbF G D S Gate Drain Max. 80 56 310 140 0.96 ± 20 27 -55 to + 175 300 10lb in (1.1N m) 120 46 14 Source Units A W W/°C V V/ns °C Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw d ™ ™ f x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Ù e g Typ. ––– 0.50 ––– mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface, TO-220 Junction-to-Ambient, TO-220 j Parameter Max. 1.045 ––– 62 Units °C/W www.irf.com 1 http://www.Datasheet4U.com 08/12/10 IRFB3607GPbF...