AT28C256

Features Fast Read Access Time – 150 ns Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum – 1 to 64-byte Page Write Operation Low Power Dissipation – 50 mA Active Current – 200 µA CMOS Standby Current Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology – Endurance: 104 or 105 Cycles – Data Retention: 10 Years Single 5V ± 10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-wide Pinout Full Military and Industrial Temperature Ranges Green (Pb/Halide-free) Packaging Option 256K (32K x 8) Paged Parallel EEPROM AT28C256 1. Description The AT28C256 is a high-performance electrically erasable and programmable readonly memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced n...