MSU6N70

MSU6N70 700V N-Channel MOSFET GENERAL DESCRIPTION The MSU6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications TO-251 FEATURES Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant / Halogen free package available 1.Gate 2. Drain 3. Source Symbol VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Parameter Value 700 ±30 6.0 4.8 28 230 7.0 14.7 4.5 300 Units V V A A A mJ A mJ V/ns °C Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C) IDM EAS IAR EAR dv/dt TL Drain Current Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds TPKG Maximum Temperature for Soldering @ Package Body for 10 seconds 260 °C PD Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C 48 0.38 -55 ~ 150 150 W W/°C °C °C TSTG TJ Note: Operating Junction Temperature Storage Temperature 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS≤6A, VDD=50V, L=7mH, VG=10V, starting TJ=+25°C. 3. ISD≤6A, dI/dt≤200A/μs, VDD≤BVDSS, starting TJ=+25°C. ©Bruckewell Technology Corporation Rev. A -2012 http://www.Datasheet4...