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7N80Z

UNISONIC TECHNOLOGIES

7A 800V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 7N80Z 7A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The U TC 7N80Z is an N...


UNISONIC TECHNOLOGIES

7N80Z

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Description
UNISONIC TECHNOLOGIES CO., LTD 7N80Z 7A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The U TC 7N80Z is an N-ch annel mod e p ower MOSF ET using UTC’s advanced technology to provide customers with planar stripe and DMOS te chnology. T his techno logy s pecializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand hig h e nergy pu lse i n the avala nche and commutation mode. The U TC 7N80Z is univ ersally a pplied in h igh efficie ncy s witch mode power supply.  FEATURES * RDS(on)=1.8Ω@VGS =10V * High switching speed * 100% avalanche tested  SYMBOL  ORDERING INFORMATION Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 7N80ZL-TF1-T 7N80ZG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-929, A http://www.Datasheet4U.com 7N80Z  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) UNIT V V A A mJ mJ V/ns W °C °C PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 800 Gate-Source Voltage VGSS ±20 Continuous I D 7 Drain Current Pulsed (Note 1) IDM 26.4 Single Pulsed (Note 2) EAS 580 Avalanche Energy Repetitive (Note 1) EAR 16.7 Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 Power Dissipation PD 52 Junction Temperature TJ + 150 Storage Temperature TSTG -55~ +150 Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=25mH, ...




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