Document
UNISONIC TECHNOLOGIES CO., LTD 5N70Z
5A, 700V LOGIC N-CHANNEL MOSFET
DESCRIPTION
Power MOSFET
1 TO-220F
1 TO-220F1
The U TC 5N70Z is an N-Ch annel en hancement MOSF ET, it uses UT C’s a dvanced tec hnology t o prov ide custom ers with a minimum on-state resistance, high switching speed and low gate charge. It can also withstand high energy pulse in the aval anche and commutation modes. The UT C 5N70Z is su itable for hi gh efficiency switching DC/DC converter, motor control and switch mode power supply.
1 TO-220F2
1 TO-251
FEATURES
1 TO-252
* RDS(ON)<2.5Ω @ VGS=10V * Low gate charge ( Typ=4.8nC) * Low CRSS (Typ=6.0pF) * High switching speed * ESD Capability
SYMBOL
D
G
S
ORDERING INFORMATION
Package TO-220F TO-220F1 TO-220F2 TO-251 TO-252 Pin Assignment 1 2 3 GD S GD S GD S G D S G D S Packing Tube Tube Tube Tube Tape Reel
Ordering Number Lead Free Halogen Free 5N70ZL-TF3-T 5N70Z G-TF3-T 5N70ZL-TF1-T 5N70Z G-TF1-T 5N70ZL-TF2-T 5N70Z G-TF2-T 5N70ZL-TM3-T 5N70Z G-TM3-T 5N70ZL-TN3-R 5N70Z G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source
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5N70Z
MARKING INFORMATION
PACKAGE TO-220F TO-220F1 TO-220F2 TO-251 TO-252 MARKING
Power MOSFET
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QW-R502-911. D
5N70Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
UNIT PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 5 A Continuous I A D 5 Drain Current Pulsed (Note 2) IDM 20 A Single Pulsed (Note 3) EAS 100 mJ Avalanche Energy Repetitive (Note 2) EAR 10 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F/TO-220F1 36 W TO-220F2 Power Dissipation PD TO-251/TO-252 W 28 Junction Temperature TJ + 150 °C Operation Temperature TOPR -55~ +150 °C Storage Temperature TSTG -55~ +150 °C Notes: 1. Absolute ma ximum ratings are those val ues b eyond which the dev ice cou ld be perm anently d amaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=6.2mH, IAS=5A, VDD=50V, RG=25Ω, Starting TJ=25°C. 4. ISD≤4.5A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25°C
THERMAL CHARACTERISTICS
SYMBOL θJA RATINGS 62.5 °C/W 110 θJC 3.47 °C/W 4.53 °C/W °C/W UNIT
PARAMETER TO-220F/TO-220F1 TO-220F2 Junction to Ambient TO-251/TO-252 TO-220F/TO-220F1 TO-220F2 Junction to Case TO-251/TO-252
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5N70Z
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
SYMBOL BVDSS TEST CONDITIONS ID=250µA, VGS=0V 700 PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse V
Power MOSFE
MIN TYP MAX UNIT V 0.18 1 10 +10 -10 2 2.15 420 55 9 40 42 135 48 70 20 15 5 20 1.4 95 0.3 4 2.5 625 65 12 60 60 155 60 90 V/°C µA µA µA µA V Ω pF pF pF ns ns ns ns nC nC nC A A V ns µC
∆BVDSS/∆TJ Reference to 25°C, ID=250µA IDSS IGSS VDS=700V, VGS=0V VDS=560V, VGS=0V, TC=125°C VGS=+20V, VDS=0V GS=-20V, VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF Total Gate Charge QG VGS=5V, VDS=160V, ID=4.5A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=5A, VGS=0V Body Diode Reverse Recovery Time trr IS=4.5A, VGS=0V, dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature
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5N70Z
Power MOSFE
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
VGS (Driver)
P.W.
Period
D=
P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
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5N70Z
Power MOSFE
TEST CIRCUITS AND WAVEFORMS(Cont.)
S witching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD
ID(t)
VDS(t)
10V
Unclamped Inductive Switch.