5A 600V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
5N60Z
Preliminary
5A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 5N60Z is a hi...
Description
UNISONIC TECHNOLOGIES CO., LTD
5N60Z
Preliminary
5A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 5N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) ≤ 2.2Ω @ VGS=10V, ID=2.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
5N60ZL-TF1-T
5N60ZG-TF1-T
5N60ZL-TN3-R
5N60ZG-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-252
Pin Assignment 123 GDS GDS
Packing
Tube Tape Reel
www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-909.b
5N60Z
MARKING
Preliminary
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-909.b
5N60Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 600 V
Gate-Source Voltage Avalanche Current (Note 2)
VGSS ±20 V IAR 5 A
Continuous Drain Current Pulsed Drain Current (Note 2)
ID 5 A IDM 10 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Dio...
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