SEMICONDUCTOR
2SC3679B
Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 5A/800V/100W
...
SEMICONDUCTOR
2SC3679B
Silicon
NPN triple diffusion planar
transistor (High voltage switching
transistor) 5A/800V/100W
RoHS RoHS
Nell High Power Products
9 67 J C3 30 2S 12
2.0
19.9±0.3
4.0
TO-3P(B)
20.0 min 4.0 max 3
2
1.8
15.6±0.4 9.6
5 . 0 ±0 . 2
4.8±0.2 2.0±0.1
Φ 3.2 ± 0,1
FEATURES
High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw
5.45±0.1 B C E
+0.2 1.05 -0.1 5.45±0.1
+0.2 0.65 -0.1
1.4
C
1
2
3
B
APPLICATIONS
Switching
regulator and general purpose
E
NPN
All dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
SYMBOL VCBO V CEO V EBO I CP IC IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature T C = 25 °C T a = 25 °C VALUE 900 800 7 10 5 2.5 100 3.5 150 -55 to 150 ºC W A V UNIT
THERMAL RESISTANCE (Ta=25°C)
SYMBOL Rth(j-c) PARAMETER Thermal resistance, junction to ambient Min Typ Max 2.0 UNIT °C/W
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SEMICONDUCTOR
2SC3679B
RoHS RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL ICBO I EBO V (BR)CEO V CEO(SUS) * h FE V CE(sat) V BE(sat) fT C ob t on t stg tf PARAMETER Collector cutoff current Emitter cutoff current Collector to emitter breakdown vo...