2SC3519B

SEMICONDUCTOR 2SC3519B Series Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 20.0 min 4.0 max TO-3P(B) FEATURES Recommend for 105W high Fiderity audio frequency amplifier output stage Complement to type 2SA1386B & 2SA1386B-A 2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 5.45±0.1 B 1.8 15.6±0.4 9.6 5 . 0 ±0 . 2 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 1.4 C 1 2 3 B APPLICATIONS Audio and general purpose E NPN All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) VALUE SYMBOL VCBO V CEO V EBO I CP (I CM ) IC IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Derate above 25 ° C Junction temperature Storage temperature T C = 25 °C 2SC3519B 2SC3519B-A 160 160 5 20 15 4 130 1.04 150 -55 to 150 ºC W W/°C A 180 180 V UNIT THERMAL CHARACTERISTICS (TC=25°C unless otherwise specified) SYMBOL Rth(j-c) PARAMETER Maximum thermal resistance, junction to case VALUE 0.96 UNIT °C/W http://www.Datasheet4U.com www.nellsemi.com P age 1 of 3 SEMICONDUCTOR 2SC3519B Series RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL V (BR)CEO ICBO I EBO h FE V CE(sat) fT t on t stg tf C OB PARAMETER Collector to emitter breakdown voltage CONDITIONS I C = 25mA, l B = 0 2SC3519B 2SC3519B-A min 160 180 100 100 100 50 2.0 ...