SEMICONDUCTOR
2SA1941B Series
Silicon PNP triple diffusion planar transistor -10A/-140V/100W
RoHS RoHS
Nell High Powe...
SEMICONDUCTOR
2SA1941B Series
Silicon
PNP triple diffusion planar
transistor -10A/-140V/100W
RoHS RoHS
Nell High Power Products
2.0
19.9±0.3
4.0
20.0 min
4.0 max
TO-3P(B) FEATURES
High breakdown voltage, V CEO = -140V (min) Complementary to 2SC5198B TO-3P package which can be installed to the heat sink with one screw
2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1
5.45±0.1 B
1.8
15.6±0.4 9.6
5 . 0 ±0 . 2
4.8±0.2 2.0±0.1
Φ 3.2 ± 0,1
1.4
C
APPLICATIONS
Suitable for use in 70W high fidelity audio amplifier’s output stage
1
2
3
B
E
PNP
All dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
SYMBOL VCBO V CEO V EBO I CP IC IB PC Tj T stg Collector to base voltage Collector to emitter voltage Emitter to base voltage
Peak collector current t p ≤ 5 ms
PARAMETER
VALUE -140 -140 -5 -20 -10 -1 T C = 25 °C 100 150
UNIT
V
Collector current Base current Collector power dissipation Junction temperature Storage temperature
A
W ºC
-55 to 150
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL Rth(j-c) PARAMETER Thermal resistance, junction to case VALUE 1.55 UNIT ºC/W
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SEMICONDUCTOR
2SA1941B Series
RoHS RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
VALUE SYMBOL PARAMETER Collector cutoff current Emitter cutoff current CONDITIONS MIN. ICBO I EBO V (BR)CEO V CBO V EBO V CBO = -140V, l E = 0 V EBO = -5V, l C = 0 -140 -140 -5 Rank-R h FE 1 Forward current transfer ratio (DC cur...