2SA1386B

SEMICONDUCTOR 2SA1386B Series Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519B) -15A/-160V,-180V/130W 5 . 0 ±0 . 2 RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 TO-3P(B) 20.0 min 4.0 max 3 2 1.8 15.6±0.4 9.6 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 FEATURES Recommend for 105W high Fiderity audio frequency amplifier output stage Complement to type 2SC3519B & 2SC3519B-A 5.45±0.1 B 1.4 C 1 2 3 B APPLICATIONS Audio and general purpose E PNP All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) VALUE SYMBOL VCBO V CEO V EBO I CP (I CM ) IC IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Derate above 25 ° C Junction temperature Storage temperature T C = 25 °C 2SA1386B 2SA1386B-A -160 -160 -5 -30 -15 -4 130 1.04 150 -55 to 150 ºC W W/°C A -180 -180 V UNIT THERMAL CHARACTERISTICS (Ta=25°C unless otherwise specified) SYMBOL Rth(j-a) PARAMETER Maximum thermal resistance, junction to ambient VALUE 1.65 UNIT °C/W http://www.Datasheet4U.com www.nellsemi.com P age 1 of 3 SEMICONDUCTOR 2SA1386B Series RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL V (BR)CEO ICBO I EBO h FE V CE(sat) fT t on t stg tf C OB PARAMETER Collector to emitter breakdown voltage CONDITIONS I C = -25mA, l B = 0 V CB = -160V, l E = 0 V CB = -180V, l...