10N60Z

UNISONIC TECHNOLOGIES CO., LTD 10N60Z 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The UT C 10N 60Z is a hi gh voltage an d hi gh curre nt po wer MOSFET, designe d to have better c haracteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This po wer MOSFET is usually use d at high s peed s witching a pplications in po wer supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) = 0.75Ω@VGS =10V * Low gate charge ( typical 44nC) * Low CRSS ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability  SYMBOL  ORDERING INFORMATION Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 10N60ZL-TF1-T 10N60ZG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-936,A http://www.Datasheet4U.com 10N60Z  ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ± 20 V Avalanche Current (Note 2) IAR 10 A Continuous I A D 10 Drain Current Pulsed (Note 2) IDM 38 A Single Pulsed (Note 3) EAS 530 mJ Avalanche Energy Repetitive (Note 2) EAR 15.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 50 W Junction Temperature TJ +150 °C Operating Temperature TOPR ...