MTP3LP01Y3

CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET Spec. No. : 794Y3 Issued Date : 2011.12.22 Revised Date : Page No. : 1/ 8 MTP3LP01Y3 Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free package lead plating and halogen-free package. BVDSS ID RDSON(typ) -30V -230mA 3Ω@-4V 4.6Ω@-2.5V 10.9Ω@-1.5V Equivalent Circuit MTP3LP01Y3 Outline SOT-723 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation (Note 2) Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Note : 1. Pulse width≤ 10μs, duty cycle≤1%. 2. When mounted on a glass epoxy with a dimension of 100mm²×1mm. Symbol VDS VGS ID IDM PD Rth,ja Tj, Tstg Limits -30 ±10 -230 -920 150 833 -55~+150 Unit V V mA mA mW °C/W °C MTP3LP01Y3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Electrical Characteristics (Ta=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *IS *ISM *VSD Min. -30 -0.6 100 Typ. 0.9 210 3 4.6 10.9 35.7 11.9 3.7 26.4 12.8 31.5 46.4 0.78 0.1 0.1 0.83 Max. -1.1 ±1 -1 -10 5 8 18 -230 -920 -1.2 Unit V V mS μA μA Ω Spec. No. : 794Y3 Issued Date : 2011.12.22 Revised Date : Page No. : 2/ 8 Test Conditions VGS=0V, ID=-25...