MTP2317N3

CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No. : 1/9 MTP2317N3 Features Advanced trench process technology High density cell design for ultra low on resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.5A RDSON@VGS=-2.5V, ID=-2.5A RDSON@VGS=-1.8V, ID=-2A -20V -5.8A 28mΩ(typ.) 35mΩ(typ.) 51mΩ(typ.) Equivalent Circuit MTP2317N3 Outline SOT-23 D G G：Gate S：Source D：Drain S Ordering Information Device MTP2317N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTP2317N3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note) Pulsed Drain Current Maximum Power Dissipation (Note) Ta=25℃ Ta=70℃ Operating Junction and Storage Temperature Range TA=25°C, VGS=-4.5V TA=70°C, VGS=-4.5V Symbol VDS VGS ID IDM PD Tj ; Tstg Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No. : 2/9 Limits -20 ±12 -5.8 -4.6 -30 1.38 0.88 -55~+150 ...