MTP2301V3

CYStech Electronics Corp. -20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C322V3 Issued Date : 2012.07.18 Revised Date : Page No. : 1/9 MTP2301V3 Features Advanced trench process technology High density cell design for ultra low on resistance Excellent thermal and electrical capabilities Compact and low profile TSOT-23 package Pb-free lead plating and halogen-free package BVDSS ID RDSON(MAX)@VGS=-4.5V, ID=-2.8A RDSON(MAX)@VGS=-2.5V, ID=-2A -20V -3.4A 79mΩ(typ.) 116mΩ(typ.) Equivalent Circuit MTP2301V3 Outline TSOT-23 D G G：Gate S：Source D：Drain S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25°C, VGS=-4.5V Continuous Drain Current @TA=70°C, VGS=-4.5V Pulsed Drain Current Ta=25℃ Maximum Power Dissipation Ta=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits -20 ±8 -3.4 -2.7 -10 1.38 (Note) 0.88 (Note) -55~+150 Unit V V A W °C MTP2301V3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Lead Temperature, for 5 second soldering(1/8” from case) Symbol Rth,ja TL Spec. No. : C322V3 Issued Date : 2012.07.18 Revised Date : Page No. : 2/9 Limit 90 (Note) 260 Unit °C/W °C Note : Surface mounted on 1 in ²FR-4 board with 2 oz. copper, t≦5sec; 270°C/W when mounted on minimum copper pad. Electrical Characteristics (Ta=25°C) Symbol Stati...