-20V P-CHANNEL MOSFET
CYStech Electronics Corp.
Spec. No. : C698C3 Issued Date : 2012.07.06 Revised Date : 2018.10.24 Page No. : 1/ 8
-20V P...
Description
CYStech Electronics Corp.
Spec. No. : C698C3 Issued Date : 2012.07.06 Revised Date : 2018.10.24 Page No. : 1/ 8
-20V P-CHANNEL Enhancement Mode MOSFET
MTP1013C3
BVDSS ID@ TA=25C, VGS=-4.5V RDSON@VGS=-4.5V, ID=-500mA
RDSON@VGS=-2.5V, ID=-300mA RDSON@VGS=-1.8V, ID=-10mA
-20V -500mA 0.63Ω(typ) 1.1Ω(typ) 1.7Ω(typ)
Features
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.2V. Compact industrial standard SOT-523 surface mount package. ESD protected gate Pb-free lead plating and halogen-free package.
Equivalent Circuit
MTP1013C3
Outline
SOT-523 D
G:Gate S:Source D:Drain
S G
Ordering Information
Device
MTP1013C3-0-T1-G
Package
SOT-523 (Pb-free lead plating package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products Product name
MTP1013C3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Tj=25C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25C, VGS=-4.5V Continuous Drain Current @ TA=70C, VGS=-4.5V Pulsed Drain Current *1 Maximum Power Dissipation @ TA=25℃
Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature
Symbol
VDS VGS
ID
IDM PD Rth,ja Tj, Tstg
Note : 1. Pulse width≤ 10μs, duty cycle≤2%. 2. When mounted on FR...
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