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MTNN8452KQ8 Dataheets PDF



Part Number MTNN8452KQ8
Manufacturers CYStech Electronics
Logo CYStech Electronics
Description Asymmetric Dual N-Channel MOSFET
Datasheet MTNN8452KQ8 DatasheetMTNN8452KQ8 Datasheet (PDF)

CYStech Electronics Corp. Asymmetric Dual N-Channel Enhancement Mode MOSFET Spec. No. : C559Q8 Issued Date : 2012.04.27 Revised Date : 2012.04.30 Page No. : 1/12 MTNN8452KQ8 Description BVDSS ID RDSON(TYP.)@VGS=10V RDSON(TYP.)@VGS=4.5V FET1 30V 8A 11mΩ 18mΩ FET 2 30V 10.2A 11mΩ 18mΩ The MTNN8452KQ8 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC conve.

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CYStech Electronics Corp. Asymmetric Dual N-Channel Enhancement Mode MOSFET Spec. No. : C559Q8 Issued Date : 2012.04.27 Revised Date : 2012.04.30 Page No. : 1/12 MTNN8452KQ8 Description BVDSS ID RDSON(TYP.)@VGS=10V RDSON(TYP.)@VGS=4.5V FET1 30V 8A 11mΩ 18mΩ FET 2 30V 10.2A 11mΩ 18mΩ The MTNN8452KQ8 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit MTNN8452KQ8 Outline SOP-8 G:Gate S:Source D:Drain MTNN8452KQ8 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current (Note 2) Spec. No. : C559Q8 Issued Date : 2012.04.27 Revised Date : 2012.04.30 Page No. : 2/12 Symbol BVDSS VGS Limits FET 1 30 ±20 8 6.4 40 1.2 (Note 2) 0.7 (Note 3) -55~+150 FET 2 30 ±20 10.2 8.1 40 2 (Note 2) 1.1 (Note 3) Unit V TA=25 °C, VGS=10V TA=70 °C, VGS=10V ID IDM PD Tj; Tstg A Pulsed Drain Current (Note 1) Power Dissipation Operating Junction and Storage Temperature Range W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a 104 178 Value 40 (Note 2) (Note 3) 62.5 (Note 2) 114 (Note 3) Unit °C/W °C/W °C/W Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. 3.Surface mounted on minimum copper pad, pulse width≤10s. FET 1 Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. 30 1.0 Typ. 1.8 11 18 9 1120 124 103 5.8 4.7 16 5.4 12.5 4.3 4.6 2 Max. 2.5 ±100 1 10 15 23 Unit V V nA μA mΩ S Test Conditions VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=30V, VGS=0 VDS=24V, VGS=0, Tj=125°C VGS=10V, ID=8A VGS=4.5V, ID=6A VDS=5V, ID=5A Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Rg MTNN8452KQ8 pF VDS=15V, VGS=0, f=1MHz ns VDS=15V, ID=1A, VGS=10V, RG=3Ω nC Ω VDS=15V, ID=8A, VGS=10V VGS=15mV, VDS=0V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Body Diode *IS *ISM *VSD *trr *Qrr 0.72 18 11 4.5 18 1 A V ns nC VGS=0V, IS=1A Spec. No. : C559Q8 Issued Date : 2012.04.27 Revised Date : 2012.04.30 Page No. : 3/12 IS=8A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% FET 2 Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. 30 1.0 Typ. 1.8 11 18 9 1090 149 105 5.8 4.7 16 5.4 12.7 4.5 4.6 2 0.5 20 12 Max..


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