Document
CYStech Electronics Corp.
Asymmetric Dual N-Channel Enhancement Mode MOSFET
Spec. No. : C559Q8 Issued Date : 2012.04.27 Revised Date : 2012.04.30 Page No. : 1/12
MTNN8452KQ8
Description
BVDSS ID RDSON(TYP.)@VGS=10V RDSON(TYP.)@VGS=4.5V
FET1 30V 8A 11mΩ 18mΩ
FET 2 30V 10.2A 11mΩ 18mΩ
The MTNN8452KQ8 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package
Equivalent Circuit
MTNN8452KQ8
Outline
SOP-8
G:Gate S:Source D:Drain
MTNN8452KQ8
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current
(Note 2)
Spec. No. : C559Q8 Issued Date : 2012.04.27 Revised Date : 2012.04.30 Page No. : 2/12
Symbol BVDSS VGS
Limits FET 1 30 ±20 8 6.4 40 1.2 (Note 2) 0.7 (Note 3) -55~+150 FET 2 30 ±20 10.2 8.1 40 2 (Note 2) 1.1 (Note 3)
Unit V
TA=25 °C, VGS=10V TA=70 °C, VGS=10V
ID IDM PD Tj; Tstg
A
Pulsed Drain Current (Note 1) Power Dissipation Operating Junction and Storage Temperature Range
W °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a 104 178 Value 40
(Note 2) (Note 3)
62.5 (Note 2) 114 (Note 3)
Unit °C/W °C/W °C/W
Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. 3.Surface mounted on minimum copper pad, pulse width≤10s.
FET 1 Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol Min. 30 1.0 Typ. 1.8 11 18 9 1120 124 103 5.8 4.7 16 5.4 12.5 4.3 4.6 2 Max. 2.5 ±100 1 10 15 23 Unit V V nA μA mΩ S Test Conditions VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=30V, VGS=0 VDS=24V, VGS=0, Tj=125°C VGS=10V, ID=8A VGS=4.5V, ID=6A VDS=5V, ID=5A
Static
BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Rg
MTNN8452KQ8
pF
VDS=15V, VGS=0, f=1MHz
ns
VDS=15V, ID=1A, VGS=10V, RG=3Ω
nC Ω
VDS=15V, ID=8A, VGS=10V VGS=15mV, VDS=0V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Body Diode *IS *ISM *VSD *trr *Qrr 0.72 18 11 4.5 18 1 A V ns nC VGS=0V, IS=1A
Spec. No. : C559Q8 Issued Date : 2012.04.27 Revised Date : 2012.04.30 Page No. : 3/12
IS=8A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
FET 2 Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol Min. 30 1.0 Typ. 1.8 11 18 9 1090 149 105 5.8 4.7 16 5.4 12.7 4.5 4.6 2 0.5 20 12 Max..