MTNN18N03Q8

CYStech Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Spec. No. : C806Q8 Issued Date : 2009.12.30 Revised Date : 2011.03.21 Page No. : 1/9 MTNN18N03Q8 Description BVDSS ID RDSON(MAX) N-CH 1 30V 10A 18mΩ N-CH 2 60V 0.115A 5Ω The MTNN18N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features Simple drive requirement Low on-resistance Fast switching speed Two N-ch MOSFETs in a package Pb-free lead plating package Equivalent Circuit MTNN18N03Q8 Outline SOP-8 G：Gate S：Source D：Drain MTNN18N03Q8 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25 °C (Note 1) Continuous Drain Current @ TC=100 °C (Note 1) Pulsed Drain Current (Note 2&3) Total Power Dissipation @ TA=25 °C Linear Derating Factor Symbol VDS VGS ID ID IDM Pd (Note 4) Spec. No. : C806Q8 Issued Date : 2009.12.30 Revised Date : 2011.03.21 Page No. : 2/9 Limits N-CH 1 30 ±20 10 7 40 2 0.016 N-CH 2 60 ±20 0.115 0.08 0.7 0.4 0.016 Unit V V A A A W W / °C ESD susceptibility Operating Junction Temperature Storage Temperature 1250 Tj Tstg Rth,ja -55~+150 -55~+150 62.5 V °C °C °C/W Thermal...