MTNK3Y3

CYStech Electronics Corp. ESD protected N-CHANNEL MOSFET Spec. No. : C447Y3 Issued Date : 2011.02.24 Revised Date : 2012.10.05 Page No. : 1/6 MTNK3Y3 Description Low voltage drive, 1.8V. Easy to use in parallel. High speed switching. ESD protected device. Pb-free package. BVDSS ID RDSON@VGS=4.5V, ID=255mA RDSON@VGS=2.5V, ID=20mA RDSON@VGS=1.8V, ID=20mA RDSON@VGS=1.6V, ID=20mA 20V 255mA 1.7Ω(typ.) 2.2Ω(typ.) 3.5Ω(typ.) 4.1Ω(typ.) Symbol MTNK3Y3 Outline SOT-723 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Symbol BVDSS VGS ID IDM PD Tj Rth,ja Limits 20 ±8 255 210 400 440 310 350 -55~+150 280 400 Unit V V *2 *3 mA mW V °C °C/W *1 *2 *3 *4 *2 *3 MTNK3Y3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%. *2. When device mounted on FR-4 board with 1 sq inch pad size. *3. When device mounted on FR-4 board with minimum pad size. *4. Human body model, 1.5kΩ in series with 100pF. Spec. No. : C447Y3 Issued Date : 2011.02.24 Revised Date : 2012.10.05 Page No. : 2/6 Electrical Characteristics (Ta=25°C) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min. 20 0.5 100 Typ. 1.7 2.2 3.5 4.1 23 7.7 5.8 Max. 1.0 ±1 500 3 4.5 6 7 50 25 5 1 Unit V V ...