MTNK3W3

CYStech Electronics Corp. ESD protected N-CHANNEL MOSFET Spec. No. : C447W3 Issued Date : 2010.07.26 Revised Date : Page No. : 1/6 MTNK3W3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package BVDSS ID RDSON 20V 100mA 3Ω Symbol MTNK3W3 Outline SOT-923 D S G G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%. *2. When device mounted on recommended land pattern. *3. Human body model, 1.5kΩ in series with 100pF. Symbol BVDSS VGS ID IDM PD Tj Rth,ja Limits 20 ±8 100 400 *1 150 *2 350 *3 -55~+150 833 Unit V V mA mA mW V °C °C/W MTNK3W3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min. 20 0.5 100 Typ. 1.7 3.5 23 7.7 5.8 Max. 1.0 ±1 500 3 6 50 25 5 1 Unit V V μA nA Ω mS Spec. No. : C447W3 Issued Date : 2010.07.26 Revised Date : Page No. : 2/6 Test Conditions VGS=0, ID=100μA VDS=VGS, ID=250μA VGS=±8V, VDS=0 VDS=20V, VGS=0 VGS=4.5V, ID=100mA VGS=1.8V, ID=20mA VDS=5V, ID=100mA GFS Dynamic Ciss Coss Crss Source-Drain Diode *VSD - pF VDS=10V, VGS=0, f=1MHz V VGS=0V, IS=10mA *Pulse Test : Pulse Wid...