MTNK3N3

CYStech Electronics Corp. ESD protected N-CHANNEL MOSFET Spec. No. : C447N3 Issued Date : 2010.08.18 Revised Date : 2013.10.23 Page No. : 1/7 MTNK3N3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free lead plating and halogen-free package BVDSS ID RDSON 20V 100mA 3Ω Symbol MTNK3N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Ordering Information Device MTNK3N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTNK3N3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. Human body model, 1.5kΩ in series with 100pF Spec. No. : C447N3 Issued Date : 2010.08.18 Revised Date : 2013.10.23 Page No. : 2/7 Symbol BVDSS VGS ID IDM PD Tj Rth,ja Limits 20 ±8 100 400 *1 300 350 *2 -55~+150 417 Unit V V mA mA mW V °C °C/W Electrical Characteristics (Ta=25°C) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min....