MTNK2N3

CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2011.12.13 Page No. : 1/7 MTNK2N3 Description The MTNK2N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free package Symbol MTNK2N3 D Outline SOT-23 D G G S G：Gate S S：Source D：Drain Ordering Information Device MTNK2N3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 702● MTNK2N3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current *1, 2 Spec. No. : C403N3 Issued Date : 2006.05.22 Revised Date :2011.12.13 Page No. : 2/7 Symbol VDSS VGSS ID IDM PD Rth,j-a TJ Tstg TA=25°C@VGS=10V TA=70°C@VGS=10V Total Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient ESD susceptibility Operating Junction Temperature Range Storage Temperature Range Limits 60 ±20 640 500 950 1.38 0.01 90 1000 -55~+150 -55~+150 *1 *2 *2 *3 Unit V V mA mA mA W W/°C °C/W V °C °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on 1in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad. *3. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 BVD...