N-CHANNEL MOSFET
CYStech Electronics Corp.
N-CHANNEL MOSFET
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2009.11.12 Page N...
Description
CYStech Electronics Corp.
N-CHANNEL MOSFET
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2009.11.12 Page No. : 1/7
MTNK1S3
Description
The MTNK1S3 is a N-channel enhancement-mode MOSFET.
Features
Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free package
Symbol
MTNK1S3 D
Outline
SOT-323 D
G G S
G:Gate S S:Source D:Drain
MTN7002ZHS3
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Total Power Dissipation ESD susceptibility Channel Temperature Storage Temperature
Continuous Pulsed Continuous Pulsed
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2009.11.12 Page No. : 2/7
Symbol VDSS
VGSS ID IDP IDR IDRP PD TCH Tstg
Limits 60 ±20 115 700 *1 115 700 *1 200 *2 1250 *3 +150 -55~+150
Unit V V mA mA mA mA mW V °C °C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch *3. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 3.6 5.5 RDS(ON)* 3 5 GFS 100 Ciss 30.5 Coss 9.3 Crss 5.9 -
Unit V V μA μA Ω mS pF
Test Conditions VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=100mA, VGS=5V ID=100mA, VGS=10V VDS=10...
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