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MTN7451Q8

CYStech Electronics

N-Channel LOGIC Level Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C841Q8 Issued Date : 2012.06.22 Revised Date : 2013.12.19 Page No. : 1/9 N-Chann...


CYStech Electronics

MTN7451Q8

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CYStech Electronics Corp. Spec. No. : C841Q8 Issued Date : 2012.06.22 Revised Date : 2013.12.19 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET MTN7451Q8 Description BVDSS ID RDS(ON)@VGS=10V, ID=2.2A RDS(ON)@VGS=5V, ID=2A 150V 4.5A 63 mΩ(typ) 68 mΩ(typ) The MTN7451Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free & Halogen-free package Symbol MTN7451Q8 Outline SOP-8 Pin 1 G:Gate D:Drain S:Source MTN7451Q8 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Spec. No. : C841Q8 Issued Date : 2012.06.22 Revised Date : 2013.12.19 Page No. : 2/9 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=10mH, ID=4.5A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TA=25 °C Total Power Dissipation TA=100 °C Operating Junction and Storage Temperature Note : *1. Pulse w...




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