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MTN4800V8 Dataheets PDF



Part Number MTN4800V8
Manufacturers CYStech Electronics
Logo CYStech Electronics
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet MTN4800V8 DatasheetMTN4800V8 Datasheet (PDF)

CYStech Electronics Corp. N -Channel Logic Level Enhancement Mode Power MOSFET Spec. No. : C737V8 Issued Date : 2011.12.30 Revised Date : 2013.11.13 Page No. : 1/9 MTN4800V8 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package BVDSS ID RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A 30V 18A 14mΩ 22mΩ Equivalent Circuit MTN4800V8 Outline DFN3×3 Pin 1 G:Gate D:Drain S:Source Ordering Information Device MTN4800V8-0-T6-G Package DFN3×3 (Pb-free lead plating and hal.

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CYStech Electronics Corp. N -Channel Logic Level Enhancement Mode Power MOSFET Spec. No. : C737V8 Issued Date : 2011.12.30 Revised Date : 2013.11.13 Page No. : 1/9 MTN4800V8 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package BVDSS ID RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A 30V 18A 14mΩ 22mΩ Equivalent Circuit MTN4800V8 Outline DFN3×3 Pin 1 G:Gate D:Drain S:Source Ordering Information Device MTN4800V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTN4800V8 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Spec. No. : C737V8 Issued Date : 2011.12.30 Revised Date : 2013.11.13 Page No. : 2/9 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Total Power Dissipation @TC=25℃ Total Power Dissipation @TA=25℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% VDS VGS ID ID IDM PD Tj, Tstg 30 ±20 18 11.4 72 8 2.5 -55~+150 V A W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max * Surface mounted on a 1 in² pad of 2oz copper. Symbol Rth,j-c Rth,j-a Value 16 50 * Unit °C/W °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS ΔBVDSS/ΔTj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Min. 30 1 Typ. 0.02 1.7 14 22 14 697 61 54 10 5 18 14 9 2.3 3.4 Max. 2.5 ±100 1 25 20 28 Unit V V/℃ V nA μA μA mΩ S Test Conditions VGS=0V, ID=250μA Reference to 25℃, ID=1mA VDS=VGS, ID=250μA VGS=±20V, VDS=0V VDS=30V, VGS=0V, Tj=25℃ VDS=30V, VGS=0V, Tj=125℃ ID=10A, VGS=10V ID=8A, VGS=4.5V VDS=5V, ID=10A pF ns ns ns ns nC nC nC VDS=25V, VGS=0, f=1MHz VDS=15V, ID=1A, VGS=10V, RG=6Ω, RD=15Ω VDS=15V, ID=10A, VGS=10V, *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN4800V8 CYStek Product Specification CYStech Electronics Corp. Source Drain Diode Symbol *IS *ISM *VSD *Trr Qrr Min. Typ. 0.8 9 20 Max. 4 16 1.3 Unit A V ns nC Spec. No. : C737V8 Issued Date : 2011.12.30 Revised Date : 2013.11.13 Page No. : 3/9 Test Conditions IS=4A,VGS=0V IS=4A,VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint unit : mm MTN4800V8 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics Typical Output Characteristics 140 BVDSS, Drain-Source Breakdown Voltage(V) 8V,9V,10V Spec. No. : C737V8 Issued Date : 2011.12.30 Revised Date : 2013.11.13 Page No. : 4/9 Brekdown Voltage vs Ambient T.


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