Document
CYStech Electronics Corp.
N -Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C737V8 Issued Date : 2011.12.30 Revised Date : 2013.11.13 Page No. : 1/9
MTN4800V8
Features
• Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package
BVDSS ID RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A
30V 18A 14mΩ 22mΩ
Equivalent Circuit
MTN4800V8
Outline
DFN3×3 Pin 1
G:Gate D:Drain S:Source
Ordering Information
Device MTN4800V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name
MTN4800V8
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol
Spec. No. : C737V8 Issued Date : 2011.12.30 Revised Date : 2013.11.13 Page No. : 2/9
Limits
Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Total Power Dissipation @TC=25℃ Total Power Dissipation @TA=25℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
VDS VGS ID ID IDM PD Tj, Tstg
30 ±20 18 11.4 72 8 2.5 -55~+150
V A W °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max * Surface mounted on a 1 in² pad of 2oz copper. Symbol Rth,j-c Rth,j-a Value 16 50 * Unit °C/W °C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol Static BVDSS ΔBVDSS/ΔTj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Min. 30 1 Typ. 0.02 1.7 14 22 14 697 61 54 10 5 18 14 9 2.3 3.4 Max. 2.5 ±100 1 25 20 28 Unit V V/℃ V nA μA μA mΩ S Test Conditions VGS=0V, ID=250μA Reference to 25℃, ID=1mA VDS=VGS, ID=250μA VGS=±20V, VDS=0V VDS=30V, VGS=0V, Tj=25℃ VDS=30V, VGS=0V, Tj=125℃ ID=10A, VGS=10V ID=8A, VGS=4.5V VDS=5V, ID=10A
pF ns ns ns ns nC nC nC
VDS=25V, VGS=0, f=1MHz
VDS=15V, ID=1A, VGS=10V, RG=6Ω, RD=15Ω
VDS=15V, ID=10A, VGS=10V,
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN4800V8
CYStek Product Specification
CYStech Electronics Corp.
Source Drain Diode
Symbol *IS *ISM *VSD *Trr Qrr Min. Typ. 0.8 9 20 Max. 4 16 1.3 Unit A V ns nC
Spec. No. : C737V8 Issued Date : 2011.12.30 Revised Date : 2013.11.13 Page No. : 3/9
Test Conditions
IS=4A,VGS=0V IS=4A,VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
unit : mm
MTN4800V8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
140
BVDSS, Drain-Source Breakdown Voltage(V)
8V,9V,10V
Spec. No. : C737V8 Issued Date : 2011.12.30 Revised Date : 2013.11.13 Page No. : 4/9
Brekdown Voltage vs Ambient T.