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MGBR30U45C

UNISONIC TECHNOLOGIES

DUAL MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR30U45C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UT C MG...


UNISONIC TECHNOLOGIES

MGBR30U45C

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Description
UNISONIC TECHNOLOGIES CO., LTD MGBR30U45C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UT C MGBR30U45C is a du al m os g ated barr ier r ectifiers, it uses UT C’s advanc ed tech nology to pro vide custom ers with lo w forward voltage drop and high switching speed, etc.  FEATURES * Ultra low forward voltage drop * High switching speed  SYMBOL  ORDERING INFORMATION Package TO-252 TO-252 Pin Assignment 1 2 3 A K A A K A Packing Tube Tape Reel Ordering Number Lead Free Halogen Free MGBR30U45CL-TN3-T MGBR30U45CG-TN3-T MGBR30U45CL-TN3-R MGBR30U45CG-TN3-R Note: Pin Assignment: A: Anode, K: Cathode www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-169.a http://www.Datasheet4U.com MGBR30U45C  Preliminary DIODE ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 45 V Working Peak Reverse Voltage VRWM 45 V Peak Repetitive Reverse Voltage VRRM 45 V Per Leg 15 A Average Rectified Output Current Per Device IO Total 3 0 A Non-Repetitive Peak Forward Surge Current 8.3ms IFSM 280 A Single Half Sine-Wave Superimposed on Rated Load Operating Junction Temperature TJ -65~ +150 °C Storage Temperature TSTG -65~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings ar...




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