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200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel)
General Description
• IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
TO-220
• IRF630/IRFS630 are available in TO-220/TO-220F packages.
TO-220F
Features
• • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast switching capability Ease of Paralleling Simple Drive Requirements RoHS Compliance and Halogen free
Application
• DC to DC Converter • Adapter • SMPS Application.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON Fax: (800)-TAITF AX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415
Rev. A/LX Page 1 of 10
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200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630
Ordering Information
Outline TO-220 TO-220F Part Number IRF630 IRFS630 Packing Type/Qty’s Tube/50pcs Tube/50pcs
Pin Configuration and Symbol
1: GATE 2: DRAIN 3: SOURCE
1: GATE 2: DRAIN 3: SOURCE
TO-220 TO-220F
Absolute Maximum Ratings (TC=25ºC unless otherwise specified, Note)
Symbol Description Ratings Unit
VDSS VGSS ID IDM EAS EAR IAR dv/dt
Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous Drain Current -Pulsed (Note1) Avalanche Energy Avalanche Current (Note1) Peak Diode Recovery dv/dt (Note3) Single Pulsed (Note2) Repetitive (Note1)
200 ± 30 9 36 250 7.4 9 5
V V A A mJ A V/ns
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200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630
Symbol Description Ratings Unit
Power Dissipation
TO-220 TO-220F TO-220 0.58 TO-220F 0.3 TO-220/TO-220F TO-220 TO-220F 3.3
74 38
W
PD
Derate above 25°C
W/°C 62 1.71 °C/ W °C/ W °C °C C
RθJA RθJC TJ TSTG TL
Thermal Resistance (Junction-to-Ambient) Thermal Resistance (Junction-to-Case) Operating Junction Temperature Storage Temperature Range
-55 to +150 -55 to +150 300 °
Maximum Lead Temperature for soldering purposes,1/8” from case for 10 seconds
Note: Absolute maximum ratings indicate limits beyond which damage to the device may occur. For guarantee specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.
Electrical Characteristics (TC=25ºC unless otherwise specified)
Symbol OFF CHARACTERISTICS Description Min. Typ. Max. Unit Conditions
V(BR)DSS IDSS IGSS
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse -
200 ---
-
1 50
V μA
VGS=0V, ID=250µA VDS=200V, VGS=0V VDS=160V, VGS=0V, TJ=125° C VGS=30V, VDS=0V VGS=-30V, VDS=0V VDS=VGS, ID=250uA VGS=10V, ID=5.4A VDS=50V, ID=5.4A
-
100 -100 4.0 0.4
nA
ON CHARACTERISTICS
VGS(th) RDS(ON) gFS Ciss Coss Crss
Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (Note 4) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
2.0 -3.8 -
-
V Ω S
800 240 76
-
DYNAMIC CHARACTERISTICS
pF
VDS=25V, VGS=0V, f=1.0MHz
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200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630
Symbol Description Min. Typ. Max. Unit Conditions SWITCHING CHARACTERISTICS
td(on) tr td(off) tf Qg Qgs Qgd Ld Ls
Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain inductance Internal Drain inductance
-
9.4 28 39 20 4.5 7.5
43 7 23 nH nC VDS =160V, ID=5.9A, VGS =10V (Note 4) measured from the drain lead 0.25” from package to center of die measured from the drain lead 0.25” from package to source bond pad VGS =0V, Is=9A (Note 4) VGS =0V, IF=5.9A di/dt=100A/us (Note4) nS VDD =100V, ID=5.9A, RG=12Ω, RD=16Ω (Note 4)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD trr Qrr ton Note
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward turn-on time (Note5)
-
170 1.1 *
2 340 2.2 -
V nS uC -
1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L=4.6mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25°C 3: Isd≤9A, di/dt≤120A/us, VDD≤VBR(DSS), Starting TJ=25°C 4: Pulse test: Pulse width ≤300us, Duty cycle≤2% 5: *Negligible, Dominated by circuit inductance
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200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630
Typical Characteristics Curves
Fig.1- On-Region Characteristics Fig.2- Transconductance Variation Vs.Drain Current and Temperature
Drain-Source Voltage VDS (V) Fig.3- Drain Current Variation Vs. Gate Voltage and Temperature Reverse Drain Current IDR (A)
Transconductance gFS (S)
Drain Current ID (A)
Drain Current ID (A) Fig.4- Body Diode Forward Voltage Variation Vs. Current and Temperature
Drain Current ID (A)
Gate-Source Voltage VGS (V)
Body Diode Forward Voltage VSD (V)
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200V/9A POWE.