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IRFS630 Dataheets PDF



Part Number IRFS630
Manufacturers TAITRON
Logo TAITRON
Description 200V/9A POWER MOSFET
Datasheet IRFS630 DatasheetIRFS630 Datasheet (PDF)

200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel) General Description • IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. TO-220 • IRF630/IRFS630 are available in TO-220/TO-220F packages. TO-220F Features • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast.

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200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel) General Description • IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. TO-220 • IRF630/IRFS630 are available in TO-220/TO-220F packages. TO-220F Features • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast switching capability Ease of Paralleling Simple Drive Requirements RoHS Compliance and Halogen free Application • DC to DC Converter • Adapter • SMPS Application. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITF AX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/LX Page 1 of 10 http://www.Datasheet4U.com 200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 Ordering Information Outline TO-220 TO-220F Part Number IRF630 IRFS630 Packing Type/Qty’s Tube/50pcs Tube/50pcs Pin Configuration and Symbol 1: GATE 2: DRAIN 3: SOURCE 1: GATE 2: DRAIN 3: SOURCE TO-220 TO-220F Absolute Maximum Ratings (TC=25ºC unless otherwise specified, Note) Symbol Description Ratings Unit VDSS VGSS ID IDM EAS EAR IAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous Drain Current -Pulsed (Note1) Avalanche Energy Avalanche Current (Note1) Peak Diode Recovery dv/dt (Note3) Single Pulsed (Note2) Repetitive (Note1) 200 ± 30 9 36 250 7.4 9 5 V V A A mJ A V/ns Rev. A/LX www.taitroncomponents.com Page 2 of 10 200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 Symbol Description Ratings Unit Power Dissipation TO-220 TO-220F TO-220 0.58 TO-220F 0.3 TO-220/TO-220F TO-220 TO-220F 3.3 74 38 W PD Derate above 25°C W/°C 62 1.71 °C/ W °C/ W °C °C C RθJA RθJC TJ TSTG TL Thermal Resistance (Junction-to-Ambient) Thermal Resistance (Junction-to-Case) Operating Junction Temperature Storage Temperature Range -55 to +150 -55 to +150 300 ° Maximum Lead Temperature for soldering purposes,1/8” from case for 10 seconds Note: Absolute maximum ratings indicate limits beyond which damage to the device may occur. For guarantee specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Electrical Characteristics (TC=25ºC unless otherwise specified) Symbol OFF CHARACTERISTICS Description Min. Typ. Max. Unit Conditions V(BR)DSS IDSS IGSS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse - 200 --- - 1 50 V μA VGS=0V, ID=250µA VDS=200V, VGS=0V VDS=160V, VGS=0V, TJ=125° C VGS=30V, VDS=0V VGS=-30V, VDS=0V VDS=VGS, ID=250uA VGS=10V, ID=5.4A VDS=50V, ID=5.4A - 100 -100 4.0 0.4 nA ON CHARACTERISTICS VGS(th) RDS(ON) gFS Ciss Coss Crss Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (Note 4) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance 2.0 -3.8 - - V Ω S 800 240 76 - DYNAMIC CHARACTERISTICS pF VDS=25V, VGS=0V, f=1.0MHz Rev. A/LX www.taitroncomponents.com Page 3 of 10 200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 Symbol Description Min. Typ. Max. Unit Conditions SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg Qgs Qgd Ld Ls Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain inductance Internal Drain inductance - 9.4 28 39 20 4.5 7.5 43 7 23 nH nC VDS =160V, ID=5.9A, VGS =10V (Note 4) measured from the drain lead 0.25” from package to center of die measured from the drain lead 0.25” from package to source bond pad VGS =0V, Is=9A (Note 4) VGS =0V, IF=5.9A di/dt=100A/us (Note4) nS VDD =100V, ID=5.9A, RG=12Ω, RD=16Ω (Note 4) DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD trr Qrr ton Note Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward turn-on time (Note5) - 170 1.1 * 2 340 2.2 - V nS uC - 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L=4.6mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25°C 3: Isd≤9A, di/dt≤120A/us, VDD≤VBR(DSS), Starting TJ=25°C 4: Pulse test: Pulse width ≤300us, Duty cycle≤2% 5: *Negligible, Dominated by circuit inductance Rev. A/LX www.taitroncomponents.com Page 4 of 10 200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 Typical Characteristics Curves Fig.1- On-Region Characteristics Fig.2- Transconductance Variation Vs.Drain Current and Temperature Drain-Source Voltage VDS (V) Fig.3- Drain Current Variation Vs. Gate Voltage and Temperature Reverse Drain Current IDR (A) Transconductance gFS (S) Drain Current ID (A) Drain Current ID (A) Fig.4- Body Diode Forward Voltage Variation Vs. Current and Temperature Drain Current ID (A) Gate-Source Voltage VGS (V) Body Diode Forward Voltage VSD (V) Rev. A/LX www.taitroncomponents.com Page 5 of 10 200V/9A POWE.


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