D4014

POIN T NINE Te c h n o l o g i e s , Inc. D4014 TetraFET 55W - 28V - 1GHz GOLD METALIZED SILICON DMOS RF FET FEATURES METAL GATE EXTRA LOW Crss BROAD BAND SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN (TCASE = 25°C unless otherwise stated) PD BVDSS VGSS ID Tstg Tj RØj-c Power Dissipation Drain-source breakdown voltage Gate-source voltage Drain Current Storage temperature Maximum operating junction temperature Thermal resistance junction-case 185W 60V ±20V 14A -65 to 150°C 200°C Max. .95°C/W ABSOLUTE MAXIMUM RATINGS APPLICATIONS HF/VHF/UHF COMMUNICATIONS ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated) Parameter BVDSS IDSS IGSS VGS(th) gfs Ciss Coss Crss Breakdown voltage, drain source Drain leakage current Gate leakage current Gate threshold voltage Transconductance (300µs pulse) Input capacitance Output capacitance Reverse transfer capacitance Test Conditions PER SIDE VGS=0 ID=100mA VDS=28V VGS=0 VGS=20V VDS=0 ID=10mA VDS=VGS VDS=10V ID=1.4A VDS=0 VDS=0 VDS=0 VGS=-0 VGS=0 VGS=0 f=1MHz f=1MHz f=1MHz Min. Typ. Max. 60 60 60 1 1 5 Unit Vdc mAdc µAdc Vdc Mhos pF pF pF 1 1.4 84 35 3.5 GPS η VSWR Common source power gain Drain efficiency Load mismatch tolerance TOTAL DEVICE PO=55W VDS=28V IDQ=1.4A f=1GHz 10 40 20:1 dB % DIMENSIONS C E DM A B C D E F G H I J K M N O P Millimeter 15.24 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.16 1.52 5.08 34.04 1.57R TOL .50 .13 .05 .13 .13 .13 .13 .13 MAX .02 .13 .13 .50 .13 .08 Inches .750 .424 4...