CMI80N06

CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. Features Simple Drive Requirement Fast Switching Low On-Resistance G D BVDSS 60V Applications Motor Control DC-DC converters RDSON 7.8m ID 80A General Purpose Power Amplifier TO220/263/262 Pin Configuration G S D S TO-220 (CMP80N06) TO-263 (CMB80N06) G D S TO-262 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM EAS IAS PD@TC=25 TSTG TJ Parameter (CMI80N06) Value 60 20 80 50 250 3 1 Units V V A A A mJ A W Drain-Source Voltage Gate-Sou ce Voltage Continuous Drain Current 1 Continuous Drain Current Pulsed Drain Current Avalanche Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 2 Single Pulse Avalanche Energy 405 80 260 -55 to 175 -55 to 175 Thermal Data Symbol R R JA JC Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-case 1 Value 62 0.9 Unit /W /W 1 http://www.Datasheet4U.com CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25 Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Drain-Source Leakage Curr...