IRLR3636PBF

PD - 96224 Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRLR3636PbF IRLU3636PbF HEXFET® Power MOSFET D Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free GD S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 60V 5.4m: 6.8m: 99A 50A c S G S D G D-Pak I-Pak IRLR3636PbF IRLU3636PbF S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 99 70 50 396 143 0.95 ±16 22 c c Units A d W W/°C V V/ns °C f -55 to + 175 300 (1.6mm from case) 170 See Fig.14, 15, 22a, 22b Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy d e d j mJ A mJ Thermal Resistance Symbol...