Dual Series Switching Diode
BAV99L, SBAV99L
Dual Series Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique...
Description
BAV99L, SBAV99L
Dual Series Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (Each Diode)
Rating
Symbol Value Unit
Reverse Voltage
VR
100
Forward Current
IF
215
Peak Forward Surge Current
IFM(surge) 500
Repetitive Peak Reverse Voltage
VRRM
100
Average Rectified Forward Current (Note 1)
IF(AV)
715
(averaged over any 20 ms period)
Vdc mAdc mAdc
V mA
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 s
IFRM
450
mA
IFSM
A
2.0
1.0
0.5
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C
PD
225
mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C
RqJA PD
556 °C/W
300
mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
RqJA TJ, Tstg
1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
417
−65 to +150
°C/W °C
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