PMEG4010ETR
26 September 2012
High-temperature 40 V, 1 A Schottky barrier rectifier
Product data sheet
1. Product pro...
PMEG4010ETR
26 September 2012
High-temperature 40 V, 1 A
Schottky barrier rectifier
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 40 V Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj ≤ 175 °C 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection 1.4 Quick reference data
Table 1. Symbol IF IF(AV) Quick reference data Parameter forward current average forward current Conditions Tsp = 165 °C δ = 0.5 ; f = 20 kHz; Tamb ≤ 140 °C; square wave δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C; square wave VR VF IR reverse voltage forward voltage reverse current Tj = 25 °C IF = 1 A; Tj = 25 °C Tj = 25 °C; VR = 40 V; tp ≤ 300 µs; δ ≤ 0.02 ; pulsed 430 10 40 490 50 V mV µA 1 A
[1]
Min -
Typ -
Max 1.4 1
Unit A A
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NXP Semiconductors
PMEG4010ETR
High-temperature 40 V, 1 A
Schottky barrier rectifier
Symbol trr
Parameter reverse recovery time
Conditions IR = 0.5 A; IF = ...