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PMEG4010ETR

NXP Semiconductors

High-temperature 40V 1A Schottky barrier rectifier

PMEG4010ETR 26 September 2012 High-temperature 40 V, 1 A Schottky barrier rectifier Product data sheet 1. Product pro...


NXP Semiconductors

PMEG4010ETR

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PMEG4010ETR 26 September 2012 High-temperature 40 V, 1 A Schottky barrier rectifier Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 40 V Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj ≤ 175 °C 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection 1.4 Quick reference data Table 1. Symbol IF IF(AV) Quick reference data Parameter forward current average forward current Conditions Tsp = 165 °C δ = 0.5 ; f = 20 kHz; Tamb ≤ 140 °C; square wave δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C; square wave VR VF IR reverse voltage forward voltage reverse current Tj = 25 °C IF = 1 A; Tj = 25 °C Tj = 25 °C; VR = 40 V; tp ≤ 300 µs; δ ≤ 0.02 ; pulsed 430 10 40 490 50 V mV µA 1 A [1] Min - Typ - Max 1.4 1 Unit A A Scan or click this QR code to view the latest information for this product http://www.Datasheet4U.com NXP Semiconductors PMEG4010ETR High-temperature 40 V, 1 A Schottky barrier rectifier Symbol trr Parameter reverse recovery time Conditions IR = 0.5 A; IF = ...




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