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SPN80T10 Dataheets PDF



Part Number SPN80T10
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN80T10 DatasheetSPN80T10 Datasheet (PDF)

SPN80T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN80T10 is the N-Channel enhancement mode  AC/DC Synchronous Rectifier power field effect transistor which is produced using super  high cell density DMOS trench technology. The SPN80T10   has been designed specifically to improve the overall  Load Switch UPS Motor Control Power Tool efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for l.

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SPN80T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN80T10 is the N-Channel enhancement mode  AC/DC Synchronous Rectifier power field effect transistor which is produced using super  high cell density DMOS trench technology. The SPN80T10   has been designed specifically to improve the overall  Load Switch UPS Motor Control Power Tool efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. FEATURES  100V/100A, RDS(ON)=8.2mΩ@VGS= 10V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L/TO- 263-2L /PPAK5x6-8L package design 2020/04/27 Ver 7 Page 1 SPN80T10 N-Channel Enhancement Mode MOSFET PIN CONFIGURATION TO-220 TO-220F TO-251S-3L TO-252-2L TO-263-2L PPAK5x6 PART MARKING 2020/04/27 Ver 7 Page 2 SPN80T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source PPAK5x6 PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN80T10T220TGB TO-220-3L SPN80T10T220FTGB TO-220F-3L SPN80T10ST251TGB TO-251S-3L SPN80T10T252RGB TO-252-2L SPN80T10T262RGB TO-263-2L SPN80T10DN8RGB PPAK5x6-8L ※ SPN80T10T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN80T10T220FTGB : Tube ; Pb – Free ; Halogen – Free ※ SPN80T10ST251TGB : Tube ; Pb – Free ; Halogen - Free ※ SPN80T10T252RGB : Tape Reel ; Pb – Free ; Halogen – Free ※ SPN80T10T262RGB : Tape Reel ; Pb – Free ; Halogen – Free ※ SPN80T10DN8RGB : Tape Reel ; Pb – Free ; Halogen – Free Part Marking SPN80T10 SPN80T10 SPN80T10 SPN80T10 SPN80T10 SPN80T10 2020/04/27 Ver 7 Page 3 SPN80T10 N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Symbol VDSS Gate –Source Voltage Continuous Drain Current(Silicon Limited) Continuous Drain Current(Silicon Limited) (PPAK5x6) Tc=25℃ Tc=70℃ Tc=25℃ Tc=70℃ VGSS ID ID Pulsed Drain Current IDM Power Dissipation@ Tc=25℃ TO-220/TO-263 Power Dissipation@ Tc=25℃ TO-251S/TO-252/TO-220F PD Power Dissipation@ Tc=25℃ PPAK5x6 Avalanche Energy with Single Pulse ( TA=25℃, L =0.1mH ) EAS Operating Junction Temperature TJ Storage Temperature Range Thermal Resistance-Junction to Case (TO-220/TO-220F/TO-263) Thermal Resistance-Junction to Case (TO-251S/TO-252) Thermal Resistance-Junction to Case (PPAK5x6) Note : The maximum current rating is package limited at 120A for TO-263-2L and TO-220-3L The maximum current rating is package limited at 78A for TO-220F-3L The maximum current rating is package limited at 70A for TO-251S-3L and TO-252-2L The maximum current rating is package limited at 80A for PPAK5x6-8L TSTG RθJC RθJC RθJC Typical 100 ±20 100 71 85 60 390 104 93 83 518 -55/150 -55/150 0.85 1.35 1.5 Unit V V A A A W mJ ℃ ℃ ℃/W ℃/W ℃/W 2020/04/27 Ver 7 Page 4 SPN80T10 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Gate Resistance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=64V,VGS=0V TJ=25°C IDSS VDS=64V,VGS=0V TJ=100℃ RDS(on) VGS=10V,ID=20A gfs VDS=10V,ID=40A RG VGS=0V,VDS=Open, f=1MHz VSD IS=20A,VGS=0V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=50V,VGS=10V ID= 20A VDS=50V,VGS=0V f=1MHz VDD=50V,RL=1Ω ID=20A,VGS=10V RG=10Ω Min. Typ Max. Unit 100 V 2.0 4.0 ±100 nA 1 uA 100 6.4 8.2 mΩ 75 S 1.6 Ω 1.2 V 56 14 nC 18 3600 290 pF 88 17 40 nS 57 37 2020/04/27 Ver 7 Page 5 SPN80T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/04/27 Ver 7 Page 6 SPN80T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/04/27 Ver 7 Page 7 SPN80T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products ar.


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