Document
SPN80T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION
APPLICATIONS
The SPN80T10 is the N-Channel enhancement mode AC/DC Synchronous Rectifier
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN80T10
has been designed specifically to improve the overall
Load Switch UPS Motor Control Power Tool
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
FEATURES 100V/100A, RDS(ON)=8.2mΩ@VGS= 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current
capability TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L/TO-
263-2L /PPAK5x6-8L package design
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SPN80T10
N-Channel Enhancement Mode MOSFET
PIN CONFIGURATION
TO-220
TO-220F
TO-251S-3L
TO-252-2L
TO-263-2L
PPAK5x6
PART MARKING
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SPN80T10
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain Source
PPAK5x6 PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN80T10T220TGB
TO-220-3L
SPN80T10T220FTGB
TO-220F-3L
SPN80T10ST251TGB
TO-251S-3L
SPN80T10T252RGB
TO-252-2L
SPN80T10T262RGB
TO-263-2L
SPN80T10DN8RGB
PPAK5x6-8L
※ SPN80T10T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN80T10T220FTGB : Tube ; Pb – Free ; Halogen – Free ※ SPN80T10ST251TGB : Tube ; Pb – Free ; Halogen - Free ※ SPN80T10T252RGB : Tape Reel ; Pb – Free ; Halogen – Free
※ SPN80T10T262RGB : Tape Reel ; Pb – Free ; Halogen – Free ※ SPN80T10DN8RGB : Tape Reel ; Pb – Free ; Halogen – Free
Part Marking
SPN80T10 SPN80T10 SPN80T10 SPN80T10 SPN80T10 SPN80T10
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SPN80T10
N-Channel Enhancement Mode MOSFET
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol VDSS
Gate –Source Voltage
Continuous Drain Current(Silicon Limited)
Continuous Drain Current(Silicon Limited) (PPAK5x6)
Tc=25℃ Tc=70℃ Tc=25℃ Tc=70℃
VGSS ID ID
Pulsed Drain Current
IDM
Power Dissipation@ Tc=25℃
TO-220/TO-263
Power Dissipation@ Tc=25℃
TO-251S/TO-252/TO-220F
PD
Power Dissipation@ Tc=25℃
PPAK5x6
Avalanche Energy with Single Pulse ( TA=25℃, L =0.1mH )
EAS
Operating Junction Temperature
TJ
Storage Temperature Range
Thermal Resistance-Junction to Case (TO-220/TO-220F/TO-263)
Thermal Resistance-Junction to Case (TO-251S/TO-252)
Thermal Resistance-Junction to Case (PPAK5x6)
Note :
The maximum current rating is package limited at 120A for TO-263-2L and TO-220-3L The maximum current rating is package limited at 78A for TO-220F-3L The maximum current rating is package limited at 70A for TO-251S-3L and TO-252-2L The maximum current rating is package limited at 80A for PPAK5x6-8L
TSTG RθJC RθJC RθJC
Typical
100
±20 100 71 85 60 390 104 93 83 518 -55/150 -55/150 0.85 1.35 1.5
Unit V V A
A
A
W
mJ ℃ ℃ ℃/W ℃/W ℃/W
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SPN80T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance Forward Transconductance Gate Resistance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V
VDS=64V,VGS=0V TJ=25°C IDSS VDS=64V,VGS=0V TJ=100℃
RDS(on) VGS=10V,ID=20A
gfs VDS=10V,ID=40A
RG
VGS=0V,VDS=Open, f=1MHz
VSD IS=20A,VGS=0V
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=50V,VGS=10V ID= 20A
VDS=50V,VGS=0V f=1MHz
VDD=50V,RL=1Ω ID=20A,VGS=10V RG=10Ω
Min. Typ Max. Unit
100
V
2.0
4.0
±100 nA
1 uA 100
6.4 8.2 mΩ
75
S
1.6
Ω
1.2 V
56
14
nC
18 3600
290
pF
88 17
40
nS
57
37
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SPN80T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN80T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN80T10
N-Channel Enhancement Mode MOSFET
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