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APT20SCD120S

MICROSEMI

Zero Recovery Silicon Carbide Schottky Diode

APT20SCD120B APT20SCD120S 1200V 20A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS • Anti-Parallel D...


MICROSEMI

APT20SCD120S

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APT20SCD120B APT20SCD120S 1200V 20A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Power Factor Correction (PFC) Low Forward Voltage Low Leakage Current 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 PRODUCT FEATURES Zero Recovery Times (trr) Popular TO-247 Package or surface mount D3PAK package PRODUCT BENEFITS Higher Reliability Systems Minimizes or eliminates snubber TO -2 4 7 D 3 PAK 1 2 MAXIMUM RATINGS Symbol VR VRRM VRWM IF IFRM IFSM Ptot TJ, TSTG TL TC = 25°C unless otherwise specified. Ratings Unit Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum D.C. Forward current TC = 25°C TC = 135°C 1200 Volts 68 20 100 220 208 66 -55 to 150 °C 300 W Amps Repetitive Peak Forward Suge Current (TJ = 45°C, tp = 10ms, Half Sine Wave) Non-Repetitive Forward Surge Current (TJ = 25°C, tp = 10ms, Half Sine) Power Dissipation Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds TC = 25°C TC = 110°C STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions Forward Voltage IF = 20A TJ = 25°C IF = 20A, TJ = 150°C Maximum Reverse Leakage Current VR = 1200V TJ = 25°C VR = 1200V, TJ = 150°C Total Capactive Charge VR = 800V, IF = 20A, di/dt = -100A/μs, TJ = 25°C Junction Capacitance VR = 0V, TJ = 25°C, f = 1MHz Min Typ 1.5 2.2 Max 1.8 Unit Volt...




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