APT20SCD120B APT20SCD120S 1200V 20A
Zero Recovery Silicon Carbide Schottky Diode
PRODUCT APPLICATIONS
• Anti-Parallel D...
APT20SCD120B APT20SCD120S 1200V 20A
Zero Recovery Silicon Carbide
Schottky Diode
PRODUCT APPLICATIONS
Anti-Parallel Diode -Switchmode Power Supply -Inverters Power Factor Correction (PFC) Low Forward Voltage Low Leakage Current
1 - Cathode 2 - Anode Back of Case - Cathode
1 2
PRODUCT FEATURES
Zero Recovery Times (trr) Popular TO-247 Package or surface mount D3PAK package
PRODUCT BENEFITS
Higher Reliability Systems Minimizes or eliminates snubber
TO -2 4 7
D 3 PAK
1
2
MAXIMUM RATINGS
Symbol
VR VRRM VRWM IF IFRM IFSM Ptot TJ, TSTG TL
TC = 25°C unless otherwise specified.
Ratings Unit
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum D.C. Forward current TC = 25°C TC = 135°C
1200
Volts
68 20 100 220 208 66 -55 to 150 °C 300 W Amps
Repetitive Peak Forward Suge Current (TJ = 45°C, tp = 10ms, Half Sine Wave) Non-Repetitive Forward Surge Current (TJ = 25°C, tp = 10ms, Half Sine) Power Dissipation Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds TC = 25°C TC = 110°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
Forward Voltage IF = 20A TJ = 25°C IF = 20A, TJ = 150°C Maximum Reverse Leakage Current VR = 1200V TJ = 25°C VR = 1200V, TJ = 150°C Total Capactive Charge VR = 800V, IF = 20A, di/dt = -100A/μs, TJ = 25°C Junction Capacitance VR = 0V, TJ = 25°C, f = 1MHz
Min
Typ
1.5 2.2
Max
1.8
Unit
Volt...