BSS123N3

CYStech Electronics Corp. N-CHANNEL MOSFET BVDSS ID Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2013.10.17 Page No. : 1/8 100V VGS=10V, ID=700mA 1.7A 290mΩ 310mΩ 260mΩ 280mΩ BSS123N3 Description RDSON(TYP) VGS=4V, ID=400mA VGS=10V, ID=170mA VGS=4V, ID=170mA The BSS123N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High speed switching Low-voltage drive(2.5V) Easily designed drive circuits Pb-free lead plating and halogen-free package Symbol BSS123N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Ordering Information Device BSS123N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name BSS123N3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature Continuous Pulsed Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2013.10.17 Page No. : 2/8 Symbol VDSS VGSS ID IDP PD TCH Tstg Limits 100 ±20 1.7 6.8 1.38 +150 -55~+150 *1 *2 Unit V V A A W °C °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is surface mounted on 1 in² copper pad of FR-4 board...