BCP53L3

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor Spec. No. : C824L3 Issued Date : 2007.03.29 Revised Date : 2010.09.06 Page No. : 1/7 BCP53L3 Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features High collector current and low VCE(SAT) Complement to BCP56L3 Pb-free package Symbol BCP53L3 Outline SOT-223 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -100 -80 -5 -1 -1.5 2 150 -55~+150 Unit V V V A A W °C °C BCP53L3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. -100 -80 -5 100 100 50 Typ. -0.16 125 Max. -100 -100 -0.3 -0.6 -1.2 -1.0 400 10 Unit V V V nA nA V V V V MHz pF Spec. No. : C824L3 Issued Date : 2007.03.29 Revised Date : 2010.09.06 Page No. : 2/7 Test Conditions IC=-100μA IC=-10mA IE=-10μA VCB=-80V VEB=-5V IC=-500mA, IB=-50mA IC=-700mA, IB=-35mA IC=-1A, IB=-50mA VCE=-2V, IC=-500mA VCE=-2V, IC=-5mA VCE=-2V, IC=-150mA VCE=-2V, IC=-500mA VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Du...