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BAV99C3

CYStech Electronics

High speed double diode

CYStech Electronics Corp. High –speed double diode Spec. No. : C328C3 Issued Date : 2009.12.14 Revised Date : 2010.10.2...


CYStech Electronics

BAV99C3

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CYStech Electronics Corp. High –speed double diode Spec. No. : C328C3 Issued Date : 2009.12.14 Revised Date : 2010.10.21 Page No. : 1/6 BAV99C3 Description The BAV99C3 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT-523 plastic SMD package. Equivalent Circuit Outline BAV99C3 2 1 SOT-523 Common connection 3 1:Anode 2:Cathode 3:Common connection Anode Cathode Features Small plastic SMD package Reverse voltage: max. 100V Forward current: max. 75mA. Pb-free lead plating package Applications High-speed switching in thick and thin-film circuits. BAV99C3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings @TA=25℃ Parameters Reverse voltage Forward current Total power dissipation Junction Temperature Storage Temperature Symbol VR IO Ptot Tj Tstg Min -65 Spec. No. : C328C3 Issued Date : 2009.12.14 Revised Date : 2010.10.21 Page No. : 2/6 Max 100 75 150 150 +150 Unit V mA mW °C °C Electrical Characteristics @ Tj=25℃ unless otherwise specified Parameters Reverse breakdown voltage Forward voltage Reverse current Diode capacitance Reverse recovery time Symbol VR VF IR CD trr Conditions Min Typ. Max 715 855 1 1.25 30 2 1.5 4 Unit V mV mV V V nA μA pF ns IR=1μA 100 IF=1mA IF=10mA IF=50mA IF=150mA VR=25V VR=100V VR=0V, f=1MHz when switched from IF=10mA to IR=10mA,RL=100Ω, measured at IR=1mA Thermal Characteristics Symbol Rth...




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