SPC6604

SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  N-Channel 20V/4.0A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=75mΩ@VGS=1.8V  P-Channel -20V/-3.4A,RDS(ON)=85mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=110mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=130mΩ@VGS=-1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TSOT-23-6L package design PIN CONFIGURATION( TSOT-23–6L ) PART MARKING 2020/04/09 Ver.3 Page 1 SPC6604 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 ORDERING INFORMATION Part Number Package SPC6604TS26RGB TSOT-23-6L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPC6604TS26RGB : Tape Reel ; Pb – Free ;...