IXGN50N120C3H1

Advance Technical Information GenX3TM 1200V IGBT w/ Diode High-Speed PT IGBT for 20-50 kHz Switching IXGN50N120C3H1 VCES IC110 VCE(sat) = 1200V = 50A ≤£ 4.2V SOT-227B, miniBLOC E153432 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC TC TC TC = 25°C = 110°C = 110°C = 25°C, 1ms Maximum Ratings 1200 1200 ±20 ±30 95 50 58 240 ICM = 100 VCE ≤ VCES 460 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Features z z z z z z V V V V A A A A A Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C Mounting Torque Terminal Connection Torque Optimized for Low Switching Losses Square RBSOA High Current Capability Isolation Voltage 2500V~ Anti-Parallel Ultra Fast Diode International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C VCE = 0V, VGE = ±20V IC = 40A, VGE = 15V, Note 1 TJ = 125°C 2.6 VCE = VCES, VGE= 0V Characteristic Values Min. Typ. Max. 3.0 5.0 250 14 ±100 4.2 V μA mA nA V V z z z z z z Power Inverters UPS SMPS PFC Circuits Welding Machines Lamp Ballasts © 2010 IXYS C...