Ultrafast Diodes
VSKDU162/12PbF
Vishay High Power Products
HEXFRED® Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules)
FEATURES
• Ele...
Description
VSKDU162/12PbF
Vishay High Power Products
HEXFRED® Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules)
FEATURES
Electrically isolated: DBC base plate Standard JEDEC package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Case style New INT-A-PAK
New INT-A-PAK
Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level
1200 V 2.5 V 150 ns 110 A at 100 °C
PRODUCT SUMMARY
VR VF (typical) trr (typical) IF(DC) at TC
ABSOLUTE MAXIMUM RATINGS
PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum power dissipation RMS isolation voltage Operating junction and storage temperature range SYMBOL VR IF IFSM PD VISOL TJ, TStg TC = 25 °C TC = 100 °C Limited by junction temperature TC = 25 °C TC = 100 °C 50 Hz, circuit to base, all terminal shorted, t = 1 s TEST CONDITIONS VALUES 1200 205 110 800 695 280 3500 - 40 to + 150 W V °C A UNITS V
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER Cathode to anode breakdown voltage Maximum forward voltage Maximum reverse leakage current SYMBOL VBR VFM IRM IR = 100 μA IF = 100 A IF = 160 A TJ = 150 °C, VR = 1200 V TEST CONDITIONS MIN. 1200 TYP. 2.5 2.9 18 MAX. 3.2 3.9 30 mA V UNITS
Document Number: 94512 Revision: 04-May-10
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