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VSKDU162

Vishay

Ultrafast Diodes

VSKDU162/12PbF Vishay High Power Products HEXFRED® Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules) FEATURES • Ele...


Vishay

VSKDU162

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Description
VSKDU162/12PbF Vishay High Power Products HEXFRED® Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules) FEATURES Electrically isolated: DBC base plate Standard JEDEC package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Case style New INT-A-PAK New INT-A-PAK Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level 1200 V 2.5 V 150 ns 110 A at 100 °C PRODUCT SUMMARY VR VF (typical) trr (typical) IF(DC) at TC ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum power dissipation RMS isolation voltage Operating junction and storage temperature range SYMBOL VR IF IFSM PD VISOL TJ, TStg TC = 25 °C TC = 100 °C Limited by junction temperature TC = 25 °C TC = 100 °C 50 Hz, circuit to base, all terminal shorted, t = 1 s TEST CONDITIONS VALUES 1200 205 110 800 695 280 3500 - 40 to + 150 W V °C A UNITS V ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Maximum forward voltage Maximum reverse leakage current SYMBOL VBR VFM IRM IR = 100 μA IF = 100 A IF = 160 A TJ = 150 °C, VR = 1200 V TEST CONDITIONS MIN. 1200 TYP. 2.5 2.9 18 MAX. 3.2 3.9 30 mA V UNITS Document Number: 94512 Revision: 04-May-10 For technical questions, contact: [email protected] www.vishay.com 1 http://www.Datasheet4U.com VSKDU162/12PbF Vishay High Power P...




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