NEXC224Z3.5V10.5X5.5TRF Datasheet PDF

V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTAB...

V-Chip Memory Back-Up Capacitors FEATURES DOUBLE LAYER CONSTRUCTION POWER BACK-UP FOR CMOS DEVICES SURFACE MOUNTABLE V-CHIP STYLE LEAD-FREE FINISH CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance Load Life Test +70°C 1,000 hours Temperature Cycling (5 cycles, -25 ~ +70°C 3.5 & 5.5VDC 0.047F ~ 1.0F (47,000μF ~ 1,000,000μF) -25°C ~ +70°C +80%/-20% (Z) Δ Capacitance Change Maximum ESR Current at 30 minutes Δ Capacitance Change Maximum ESR Current at 30 minutes Δ Capacitance Change Maximum ESR Current at 30 minutes *For high temperature +85°C, high temperature reﬂow parts see the NEXCW series NEXC Series Humidity Resistance (240 hours @ 40°C/90% RH) Less than ±30% of initial measured value Less than 200% of the speciﬁed maximum value Less than 200% of the speciﬁed maximum value Within +80%/-20% of speciﬁed value Less than speciﬁed maximum value Less than speciﬁed maximum value Less than ±20% of initial measured value Less than 120% of the speciﬁed maximum value Less than 120% of the speciﬁed maximum value STANDARD VALUES AND SPECIFICATIONS NIC P/N NEXC104Z3.5V10.5X5.5TRF NEXC224Z3.5V10.5X5.5TRF NEXC474Z3.5V10.5X8.5TRF NEXC473Z5.5V10.5X5.5TRF NEXC104Z5.5V10.5X5.5TRF NEXC224Z5.5V10.5X8.5TRF NEXC474Z5.5V16X9.5TRF NEXC105Z5.5V21X10.5TRF Capacitance Value (F) Discharge 0.1 0.22 0.47 0.047 0.1 0.22 0.47 1.0 Working Voltage (VDC) 3.5 3.5 3.5 5.5 5.5 5,5 5.5 5.5 Holding Voltage (VDC min.) 4.2 4.2 4.2 4.2 4.2 Max. Current ...