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RFPA2189

RF Micro Devices

GaAs HBT POWER AMPLIFIER

RFPA2189 GaAs HBT Power Amplifier 0.5W, 400MHz to 2700MHz RFPA2189 GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz Pac...


RF Micro Devices

RFPA2189

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Description
RFPA2189 GaAs HBT Power Amplifier 0.5W, 400MHz to 2700MHz RFPA2189 GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz Package: SOT-89 GND 4 Features    -60dBc ACPR at 16dBm WCDMA 0.5W Output Power (P1dB) Excellent Linearity to DC Power Ratio NF=3.0dB at 880MHz Single-Supply 5V Operation Class 1C (1000V) HBM ESD    1 RFIN 2 3 Applications  GaAs Pre-Driver for Base Station Amplifiers PA Stage for Commercial Wireless Infrastructure 2nd or 3rd Stage LNAs Class AB Operation for GSM, DCS, PCS, UMTS, WiMAX, LTE Transceiver Applications GND RFOUT/VCC Functional Block Diagram    Product Description The RFPA2189 is a single-stage GaAs HBT power amplifier specifically designed for Wireless Infrastructure applications. It offers ultra-linear operation at a comparably low DC power making it ideal for next generation radios requiring high efficiency. Its external matching allows for use across various radio platforms within 400 MHz to 2700MHz. The RFPA2189 offers low noise figure making it an excellent solution for 2nd and 3rd stage LNAs. Ordering Information RFPA2189SR RFPA2189SQ RFPA2189TR7 RFPA2189PCK-410 RFPA2189PCK-411 7” Reel with 100 pieces Sample bag with 25 pieces 7” Reel with 2500 pieces 869MHz to 894MHz PCBA with 5-piece sample bag 2110MHz to 2170MHz PCBA with 5-piece sample bag GaAs HBT GaAs MESFET InGaP HBT Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES®, RFMD®, O...




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