CY14E116L

CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S 16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM 16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM Features ■ 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25-ns, 30-ns and 45-ns access times ❐ Internally organized as 2048K × 8 (CY14X116L), 1024K × 16 (CY14X116N), 512K × 32 (CY14X116S) ❐ Hands-off automatic STORE on power-down with only a small capacitor ❐ STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down ❐ RECALL to SRAM initiated by software or power-up ■ High reliability ❐ Infinite read, write, and RECALL cycles ❐ 1 million STORE cycles to QuantumTrap ❐ Data retention: 20 years ■ Sleep mode operation ■ Low power consumption ❐ Active current of 75 mA at 45 ns ❐ Standby mode current of 650 A ❐ Sleep mode current of 10 A ■ Operating voltages: ❐ CY14B116X: VCC = 2.7 V to 3.6 V ❐ CY14E116X: VCC = 4.5 V to 5.5 V ...