DatasheetsPDF.com

CGHV27030S Dataheets PDF



Part Number CGHV27030S
Manufacturers CREE
Logo CREE
Description GaN HEMT
Datasheet CGHV27030S DatasheetCGHV27030S Datasheet (PDF)

CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devicesare ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V CGHV27030S is also ideal for tactical communications and 28 V operations. applications operating Th.

  CGHV27030S   CGHV27030S



Document
CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devicesare ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V CGHV27030S is also ideal for tactical communications and 28 V operations. applications operating The from 20-25P0a0ckaPgNe :TyCpGeH:V32x740D30FSN MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Rev 0.2 – April 2014 Typical Performance 2.5-2.7 GHz (TC = 25˚C) , 50 V Parameter 2.5 GHz 2.6 GHz Small Signal Gain 23.0 22.0 2.7 GHz 21.4 Units dB Adjacent Channel Power @ POUT =5 W -34.5 -36.5 -37.0 dBc Drain Efficiency @ POUT = 5 W 29.5 31.5 32.9 % Input Return Loss 13.4 9.5 10.4 dB Note: Measured in the CGHV27030S-TB1 application circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. Features for 50 V in CGHV27030S-TB1 • 2.5 - 2.7 GHz Operation • 30 W Typical Output Power • 21 dB Gain at 5 W PAVE • -36 dBc ACLR at 5 W PAVE • 32% efficiency at 5 W PAVE • High degree of APD and DPD correction can be applied Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit CGHV27030S-TB1 CGHV27030S-TB2 CGHV27030S-TB3 CGHV27030S-TB4 CGHV27030S-TB5 Operating Frequency 2.5 - 2.7 GHz 2.5 - 2.7 GHz 1.8 - 2.2 GHz 1.8 - 2.2 GHz 1.2 - 1.4 GHz Amplifier Class Class A/B Class A/B Class A/B Class A/B Class A/B Subject to change without notice. www.cree.com/RF Operating Voltage 50 V 28 V 28 V 50 V 50 V 1 http://www.Datasheet4U.com Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Case Operating Temperature3 Thermal Resistance, Junction to Case4 VDSS VGS TSTG TJ IGMAX IDMAX TS TC RθJC 125 -10, +2 -65, +150 225 4 1.5 245 -40, +150 6.18 Volts Volts ˚C ˚C mA A ˚C ˚C ˚C/W 25˚C 25˚C 25˚C 25˚C 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. See also, the Power Dissipation De-rating Curve on page 12. 4 Measured for the CGHV27030S at PDISS = 12 W 5 The RTH for Cree’s demonstration amplifier, CGHV27030S-TB1, with 33 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.9°C. The total RT.


ADF4155 CGHV27030S CY14B116L


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)