DatasheetsPDF.com
K3798
2SK3798
Description
2SK3798 TOSHIBA Field Effect
Transistor
Silicon N Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3798 Unit: mm Switching
Regulator
Applications Low drain-source ON resistance: RDS (ON) = 2.5Ω (ty p.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10...
Toshiba Semiconductor
Download K3798 Datasheet
Similar Datasheet
K3700
2SK3700
- Toshiba Semiconductor
K3702
2SK3702
- Sanyo Semicon Device
K3703
2SK3703
- Sanyo Semicon Device
K3704
2SK3704
- Sanyo
K3706
2SK3706
- Sanyo Semicon Device
K3709
2SK3709
- Sanyo Semicon Device
K3711
2SK3711
- Sanken electric
K3713
2SK3713
- NEC
K3715
2SK3715
- NEC
K372
2SK372
- Toshiba
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)