H2A1-H1050

H2A1-H1050 IR High Power single chip LED H2A1-H1050 is a GaAlAs based, high power 1050 nm single chip LED in standard hexagonal Aluminum package for general application. Slots i n the A luminum-core P CB allow f or easy m ounting of standard c ollimating optics an d a re also suitable f or M3 or M4 m ounting s crews. Lar ge el ectrical i nterconnection pads on t he P CB al low f or c onvenient installation. Specifications Structure: GaAlAs Peak Wavelength: 1050 nm Optical Output Power: typ. 50 mW Life Time: > 10.000 hours Housing: standard emitter package Absolute Maximum Ratings (Ta=25°C) Parameter Power Dissipation, DC Forward Current, DC Pulsed Current (1% duty cycle, 1kHz) Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature (max. 1,5 s) Symbol PD IF IFP UR Topr Tstg Tsol Value 1000 500 1000 -5 -30 … +70 -30 … +85 330 Unit mW mA mA V °C °C °C Electro-Optical Characteristics (Ta=25°C) Parameter Forward Current Viewing Angle CW Output Power Peak Wavelength Forward Voltage Half Width (FWHM) Symbol IF φ PO λP UF Δλ Condition IF = 350 mA IF = 350 mA IF = 350 mA IF = 350 mA IF = 350 mA Min. Typ. 350 ± 75 50 1050 1.2 47 Max. Unit mA deg. mW nm V nm - - Wavelength measurements tolerance is +/- 2% Output power measurement tolerance is +/- 10% Voltage measurement tolerance is +/- 2% Device Materials Item foundation Lens Electrodes PCB Plastic Acryl AgCu Al Material 13.08.2012 H2A1-H1050 1/4 http://www.Datasheet4U.com Typical Perform...