5STP18F1800

VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 1660 A 2610 A 21000 A 0.83 V 0.23 mΩ Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA1028-04 Jan. 02 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking Maximum rated values 1) Symbol VDRM, VRRM VRSM1 dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.67 x VDRM, Tj = 125°C 5STP 18F1800 1800 V 2000 V 5STP 18F1600 1600 V 1800 V 1000 V/µs min typ 5STP 18F1200 1200 V 1400 V Characteristic values Symbol Conditions IDRM IRRM VDRM, Tj = 125°C VRRM, Tj = 125°C max 200 200 Unit mA mA Forwarde leakage current Reverse leakage current Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 14 typ 22 max 24 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter Weight Surface creepage distance Air strike distance Symbol Conditions m DS Da min 25 14 typ 0.6 max 1) Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. http://www.Datasheet4U.com 5STP 18F1800 On-state Maximum rated values 1) Parameter Max. average on-state current RMS on-state current Max. peak non-repetitive surge current Limiting load integral M...