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K3056 Dataheets PDF



Part Number K3056
Manufacturers NEC
Logo NEC
Description 2SK3056
Datasheet K3056 DatasheetK3056 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3056 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3056 2SK3056-S 2SK3056-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diod.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3056 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3056 2SK3056-S 2SK3056-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (V GS = 0 V) Gate to Source Voltage (V DS = 0 V) Gate to Source Voltage (V DS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 60 ±20 +20, −10 ±32 ±100 34 1.5 150 –55 to +150 16 25.6 V V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 3.68 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13095EJ1V0DS00 (1st edition) Date Published March 1999 NS CP(K) Printed in Japan © 1998,1999 http://www.Datasheet4U.com 2SK3056 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr | TEST CONDITIONS VGS = 10 V, ID = 16 A VGS = 4.0 V, ID = 16 A VDS = 10 V, ID = 1 mA DS MIN. TYP. 24 35 MAX. 34 50 2.0 UNIT mΩ mΩ V S 1.0 8.0 1.5 20 = V10 V, ID = 16 A VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 16 A VGS(on) = 10 V VDD = 30 V RG = 10 Ω ID = 32 A VDD = 48 V VGS = 10 V IF = 32 A, VGS = 0 V If = 32A, VGS = 0 V di/dt = 100A/µs 920 280 120 25 300 70 120 25 3.3 7.0 1.0 50 68 10 ±10 µA µA pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RG = 10 Ω VGS RL VDD ID 90 % 90 % ID VGS Wave Form 0 10 % VGS(on) 90 % BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1 % ID Wave Form 0 10 % td(on) ton tr td(off) toff 10 % tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D13095EJ1V0DS00 2SK3056 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80 FORWARD BIAS SAFE OPERATING AREA 1000 ID - Drain Current - A ID - Drain Current - A 100 GS ID(pulse) = 100 A V) 60 PW = VGS =10 V 10 =1 0 I (DC) = 32 A D 10 1 µs 0 µs 10 RD S( on ) Lim ite d (V 40 VGS = 4.0 V 20 Pulsed m s Po we rD iss ip 10 10 ms 0 DC ms at io n Li m 1 0.1 TC = 25˚C Single Pulse ite d 1 10 100 0 12 VDS - Drain to Source Voltage - V 3 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 Pulsed VDS = 10 V ID - Drain Current - A 10 1 TA = -25˚C 25˚C 75˚C 125˚C 0 2 4 6 8 0.1 VGS - Gate to Source Voltage - V Data Sheet D13095EJ1V0DS00 3 2SK3056 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - ˚C/W 100 Rth(ch-A) = 83.3 ˚C/W 10 Rth(ch-C) = 3.68 ˚C/W 1 0.1 TC = 25˚C Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1 000 0.01 10 µ PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance - mΩ FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 VDS =10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 75 Pulsed 10 TA = 125˚C 75˚C 25˚C −25˚C 50 ID = 16 A 25 1.0 0.1 0.1 1 10 100 0 10 VGS - Gate to Source Voltage - V 20 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 75 Pulsed VGS(off) - Gate to Source Cutoff Voltage - V GATE TO SOURCE CUTOFF .


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