Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3056
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3056 2SK3056-S 2SK3056-ZJ PACKAGE TO-220AB TO-262 TO-263
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (V GS = 0 V) Gate to Source Voltage (V DS = 0 V) Gate to Source Voltage (V DS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
60 ±20 +20, −10 ±32 ±100 34 1.5 150 –55 to +150 16 25.6
V V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 3.68 83.3 °C/W °C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13095EJ1V0DS00 (1st edition) Date Published March 1999 NS CP(K) Printed in Japan
©
1998,1999
http://www.Datasheet4U.com
2SK3056
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr | TEST CONDITIONS VGS = 10 V, ID = 16 A VGS = 4.0 V, ID = 16 A VDS = 10 V, ID = 1 mA
DS
MIN.
TYP. 24 35
MAX. 34 50 2.0
UNIT mΩ mΩ V S
1.0 8.0
1.5 20
= V10 V, ID = 16 A
VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 16 A VGS(on) = 10 V VDD = 30 V RG = 10 Ω ID = 32 A VDD = 48 V VGS = 10 V IF = 32 A, VGS = 0 V If = 32A, VGS = 0 V di/dt = 100A/µs 920 280 120 25 300 70 120 25 3.3 7.0 1.0 50 68
10 ±10
µA µA
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG RG = 10 Ω
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 τ τ = 1 µs Duty Cycle ≤ 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50 Ω
RL VDD
2
Data Sheet D13095EJ1V0DS00
2SK3056
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
60 50 40 30 20 10 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100 120 140 160
TC - Case Temperature - ˚C
TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80
FORWARD BIAS SAFE OPERATING AREA 1000
ID - Drain Current - A
ID - Drain Current - A
100
GS
ID(pulse) = 100 A
V)
60
PW
=
VGS =10 V
10
=1
0
I (DC) = 32 A
D
10
1
µs
0
µs
10
RD
S(
on
)
Lim
ite
d
(V
40 VGS = 4.0 V 20 Pulsed
m
s
Po
we
rD
iss
ip
10 10 ms 0 DC ms
at io n Li m
1 0.1
TC = 25˚C Single Pulse
ite
d
1
10
100
0
12 VDS - Drain to Source Voltage - V
3
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed VDS = 10 V
ID - Drain Current - A
10
1
TA = -25˚C 25˚C 75˚C 125˚C 0 2 4 6 8
0.1 VGS - Gate to Source Voltage - V
Data Sheet D13095EJ1V0DS00
3
2SK3056
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - ˚C/W
100
Rth(ch-A) = 83.3 ˚C/W
10 Rth(ch-C) = 3.68 ˚C/W
1
0.1 TC = 25˚C Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1 000
0.01 10 µ
PW - Pulse Width - s
RDS(on) - Drain to Source On-State Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
100
VDS =10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 75 Pulsed
10 TA = 125˚C 75˚C 25˚C −25˚C
50
ID = 16 A 25
1.0
0.1 0.1
1
10
100
0
10 VGS - Gate to Source Voltage - V
20
ID - Drain Current - A
RDS(on) - Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 75 Pulsed
VGS(off) - Gate to Source Cutoff Voltage - V
GATE TO SOURCE CUTOFF .